|
Base Material
|
GalnP2/InGaAs/Ge
|
|
AR coating
|
TIO/Al2O3
|
|
Active Cell Area
|
30.15c㎡
|
|
Cell Thickness
|
0.36±0.02mm
|




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$620.00
Compare|
Base Material
|
GalnP2/InGaAs/Ge
|
|
AR coating
|
TIO/Al2O3
|
|
Active Cell Area
|
30.15c㎡
|
|
Cell Thickness
|
0.36±0.02mm
|






● TOPCon / excellent temperature coefficient
● Lossless cutting / PID resistant
● Low BOS and LCOE
● Double-sided power generation


Power range: 605~625W
Power tolerance: 0~+5W
Highest module conversion efficiency: 22.4%
Attenuation in the first year: ≤ 1.0%
Attenuation over the years: ≤ 0.4%
● TOPCon / low temperature coefficient
● Lossless cutting / PID resistant
● Low BOS and LCOE
● Double-sided power generation


For more details,please call us.


Power range: 540~555W
Power tolerance: 0~+5W
Highest module conversion efficiency: 21.5%
First year attenuation: ≤ 2.0%
Attenuation over the years: ≤ 0.45%
● PERC+ / multi-busbar half-cut
● Lossless cutting / PID resistant
● Low BOS and LCOE
● Double-sided power generation
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